| 摘要 |
The purpose of the present invention is to provide a film forming method etc. capable of controlling stress generated in a thin film of a nitride silicon layer or nitride aluminum. A substrate which is placed on a rotary table (2) within a vacuum container (12) is rotated and a thin film is obtained by arranging a molecular layer of a reaction product made of the nitride aluminum or nitride silicon. The substrate (W) is rotated by rotating the rotary table (2) and first processing gas which is raw gas for obtaining the reaction product. Second processing gas which is gas for nitrifying the first processing gas is provided at the position which is separately set in a circumference direction for the position in which the first processing gas is supplied to the substrate (W). After that, the molecular layer of the reaction product formed on the substrate (W) is irradiated with ultraviolet rays to control the stress generated in the thin film. [Reference numerals] (AA) Raw material gas; (BB,DD) N_2 gas; (CC) NH_3 gas; (EE) Rotation direction of a rotary table |
