发明名称 |
Non-volatile memory devices including capping layer contact holes |
摘要 |
A non-volatile memory device includes a substrate having memory cell and peripheral circuit regions thereof. A non-volatile memory cell gate on a memory cell region of the substrate includes a floating gate on the substrate, a first insulating gate on the floating gate opposite the substrate, and a control gate on the first insulating layer opposite the floating gate. A resistor layer is provided on a peripheral circuit region of the substrate, and the second insulating layer is provided on the resistor layer opposite the substrate. In addition, a capping layer is provided on the second insulating layer opposite the resistor layer wherein a contact hole is defined by the second insulating layer and the capping layer thereby exposing a portion of the resistor layer. Related methods are also discussed.
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申请公布号 |
US5852311(A) |
申请公布日期 |
1998.12.22 |
申请号 |
US19970869703 |
申请日期 |
1997.06.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON, KI-HO;JANG, DONG-SOO |
分类号 |
H01L21/8247;H01L27/10;H01L27/105;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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