发明名称 |
Deep sub-micron polysilicon gap formation |
摘要 |
A method for forming a gap in a silicon layer is described. A silicon layer is formed over a substrate. A nitride layer is formed over the silicon layer and an oxide layer is formed over the silicon layer, adjacent to the nitride layer. A portion of the oxide layer is then removed to form an exposed region of the silicon layer. Then an etchant is applied to the exposed region to form an gap of the silicon layer.
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申请公布号 |
US5851887(A) |
申请公布日期 |
1998.12.22 |
申请号 |
US19960622916 |
申请日期 |
1996.03.27 |
申请人 |
CYPRESS SEMICONDUCTOR CORPORATION |
发明人 |
CALDWELL, ROGER F.;WATT, JEFFREY T. |
分类号 |
H01L21/764;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/764 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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