| 发明名称 |
Semiconductor device fabrication method for preventing tungsten from removing |
| 摘要 |
A contact is formed in an insulating film covering on a silicon substrate and thereafter an amorphous silicon film is deposited thereon at 400 DEG to 500 DEG C. by using disilane. A tungsten film is then formed and etched back to form a tungsten plug through etch-back.
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| 申请公布号 |
US5851581(A) |
申请公布日期 |
1998.12.22 |
| 申请号 |
US19970899722 |
申请日期 |
1997.07.24 |
| 申请人 |
NEC CORPORATION |
发明人 |
ZENKE, MASANOBU |
| 分类号 |
H01L21/285;C23C16/14;C23C16/54;H01L21/28;H01L21/768;H01L29/40;(IPC1-7):B05D5/12 |
主分类号 |
H01L21/285 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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