发明名称 |
Method of forming inter-metal dielectric layer for WVIA process |
摘要 |
A method of forming an inter-metal dielectric layer using hydrogen silsesquoxane (HSQ) as one of the dielectric layers. HSQ is a highly fluidic material that has a high gap-filling capacity. Therefore, the desired thickness and uniformity can be obtained in a single coating operation. Furthermore, when the HSQ layer is cured in an atmosphere of gaseous nitrogen, the HSQ layer is able to attain a high degree of planarity. Consequently, there is no need to planarize the dielectric layer before carrying out subsequent operations.
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申请公布号 |
US5872066(A) |
申请公布日期 |
1999.02.16 |
申请号 |
US19980103860 |
申请日期 |
1998.06.24 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
FANG, CHENG-YU;HUANG, KUO-LIANG;HSU, CHING-GJI;FAN, YUNG-CHIEH |
分类号 |
H01L21/316;(IPC1-7):H01L21/31;B05D3/02;H01L21/469;H01L21/476 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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