发明名称 |
COPPER-TITANIUM ALLOY SPUTTERING TARGET, SEMICONDUCTOR WIRING LINE FORMED USING THE SPUTTERING TARGET, AND SEMICONDUCTOR ELEMENT AND DEVICE EACH EQUIPPED WITH THE SEMICONDUCTOR WIRING LINE |
摘要 |
A copper-titanium alloy sputtering target comprising 3 at% or more and less than 15 at% of Ti and a remainder made up of Cu and unavoidable impurities, wherein a variation (standard deviation) in hardness is within 5.0 and a variation (standard deviation) in electric resistance is within 1.0 in an in-plane direction of the target. Provided are: a sputtering target for forming a copper-titanium alloy wiring line for semiconductors capable of causing the copper alloy wiring line for semiconductors to be equipped with a self-diffusion suppressive function, effectively preventing contamination around the wiring line caused by diffusion of active Cu, improving electromigration (EM) resistance, corrosion resistance and the like, enabling the arbitrary formation of a barrier layer in a simple manner, and uniformizing film properties; a copper-titanium alloy wiring line for semiconductors; and a semiconductor element and a device each equipped with the semiconductor wiring line. |
申请公布号 |
EP2682499(A1) |
申请公布日期 |
2014.01.08 |
申请号 |
EP20120752228 |
申请日期 |
2012.02.15 |
申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
OTSUKI TOMIO;FUKUSHIMA ATSUSHI |
分类号 |
C23C14/34;C22C9/00;C22F1/00;C22F1/08;C23C14/16;H01L21/28;H01L21/285;H01L21/3205;H01L23/52;H01L23/532 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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