发明名称 Integrated electron flux amplifier and collector comprising a semiconductor microchannel plate and a planar diode
摘要 An electron flux amplifier is provided wherein a microchannel plate (MCP) is monolithically formed with, or bonded to, a semiconductor amplifier. In a preferred embodiment, microchannels are formed to extend into a semiconductor substrate to a predetermined depth from the surface, and a collection diode is formed in the substrate beneath the channels. The collection diode may comprise a single planar diode, or a plurality of electrically isolated diodes to provide for imaging of the electron flux. The electron flux amplifier may be used as a detector in a photomultiplier tube (PMT) having a photoelectronically responsive input surface and one or more accelerating electrodes for directing a photoelectron flux toward the electron flux amplifier. <IMAGE>
申请公布号 EP1120812(B1) 申请公布日期 2014.01.08
申请号 EP20000310479 申请日期 2000.11.24
申请人 BURLE TECHNOLOGIES, INC. 发明人 BURLEFINGER, ERICH;TOMASETTI, CHARLES M.
分类号 H01J43/24;H01J31/48;H01J31/49 主分类号 H01J43/24
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