发明名称 INTERNAL VOLTAGE GENERATING CIRCUIT FOR SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To prevent the level reduction of an internal voltage to be supplied to a semiconductor device by sensing the reduction of the level of an external voltage lower than a prescribed level in such a state, outputting a relevant signal and supplying the external voltage to the internal voltage or cutting it corresponding to that output signal. SOLUTION: The level of an external voltage Vcc is converted with a reference voltage Vref and outputted to a driving part 2 by a voltage generating part 1 and by receiving the output of the voltage generating part 1. and an internal voltage Vdd to be fed back, that driving part 2 outputs the internal voltage Vdd at a prescribed level to a switching part 3. Then, that switching part 3 outputs the relevant signal at the time of reducing the level of the external voltage Vcc lower than the prescribed level through an area sensing part 30 and corresponding to that output signal, the external voltage Vcc is supplied as the internal voltage Vdd or cut off. Thus, the level of the internal voltage to be supplied to the semiconductor device is prevented from being rapidly lowered and the erroneous operation of the semiconductor device can be prevented.</p>
申请公布号 JPH11202955(A) 申请公布日期 1999.07.30
申请号 JP19980164840 申请日期 1998.06.12
申请人 LG SEMICON CO LTD 发明人 RYO TOJUN
分类号 G11C11/413;G05F1/46;G05F1/56;G05F3/26;G11C11/40;G11C11/407;G11C16/06;H03K19/00;(IPC1-7):G05F1/56 主分类号 G11C11/413
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