| 摘要 |
PROBLEM TO BE SOLVED: To provide a crystalline silicon film having excellent crystallinity and a surface with less ridges, by forming a first crystalline silicon film, then forming an amorphous silicon film thereon, and crystallizing the amorphous silicon film by irradiation with laser beams or the like to form a second crystalline silicon film. SOLUTION: First, a first amorphous silicon film 101 is crystallized to form a first crystalline silicon film 102. In this case, crystallization by heating processing is preferred. On the first crystalline silicon film 102 thus obtained, a second amorphous silicon film 103 is formed and irradiated with laser beams to form a second crystalline silicon film 104. It is preferred to etch the surface of the first crystalline silicon film 102 to form an excellent surface before forming the second amorphous silicon film 103. Alternatively, it is preferred to form the second amorphous silicon film 103 where an excellent surface immediately after crystallization processing of the first amorphous silicon film 101 is maintained. Thus, good flatness is provided. |
