| 摘要 |
PROBLEM TO BE SOLVED: To prevent rise of a resistance value of a high-melting metal film and prevent generation of irregularity in the form of patterns consisting of the high-melting metal film, irrespective of formation of a silicon nitride film through chemical vapor deposition method on the high-melting metal film which is to serve as a gate electrode or a metal interconnection. SOLUTION: A silicon oxide film 2, a polycrystalline silicon film 3, a barrier metal layer 4 and a high-melting metal film 5 are successively deposited on the entire surface of a silicon substrate 1. Subsequently, the oxygen concentration inside a load lock chamber which is provided adjacent to a reactor is reduced to 1 ppm or less, followed by putting the silicon substrate 1 into the inside of the load lock chamber. Then, the silicon substrate 1 is transferred to the reactor where the temperature is maintained around 600 deg.C and depressurized, followed by letting flow a gaseous ammonia into the reactor for five minutes in a state where the temperature therein is maintained at 600 deg.C. Thereafter, the temperature in the reactor is raised up to 760 deg.C along with the introduction of a source gas thereto composed of an NH3 gas and an SiH2 Cl2 gas, thereby forming a first silicon nitride film 6 on the high-melting metal film 5 by LP-CVD method. |
