| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor at a low cost which has hetero junction structure composed of silicon as main component and is excellent in characteristics. SOLUTION: In this semiconductor device, a first silicon layer 12 (Si layer), a second silicon layer 13 (Si1-y Cy layer) containing carbon and a third silicon layer 13 which does not contain carbon are laminated on a silicon substrate 10 in order. Since the lattice constant of the Si1-y Cy layer is smaller than that of the Si layer, a conduction band and a valence band of the second silicon layer 13 receive tensile strain and are split. Electrons having small effective mass which are induced by an electric field applied to a gate electrode 16 are confined in the second silicon layer 13 and transit in the channel direction, and an N-MOSFET of extremely high mobility can be obtained. By constituting the second silicon layer 13 of Si1-x-y Gex Cy , structure suitable for a CMOS device of high performance is obtained.
|
