| 摘要 |
PROBLEM TO BE SOLVED: To eliminate edge surface discharge in the inside at all relating to a semiconductor device for which an MOS type device like IGBT is mounted to the flat type package of an airtight structure. SOLUTION: A guard ring part 2 is formed at the outer periphery of the surface where an emitter electrode is arranged of an IGBT chip 1 and a frame- like insulation film 3 is adhered so as to cover the guard ring part 2. The external dimension of the insulation film 3 is formed larger than the external dimension of the IGBT chip 1, and the outer peripheral end part is surely projected from a chip end face 4 to an outer side and adhered to the IGBT chip 1. Thus, an edge surface distance between the chip end face 4 and the emitter electrode is extended, the influence of electric field strength is mitigated and discharge withstanding current rating is raised. Even when fine metallic powder is mounted on the insulation film 3, since the electric field strength is not changed by it, the edge surface discharge does not occur. |
