发明名称 SURFACE ACOUSTIC DEVICE
摘要 <p>An object of the invention is to provide a SAW device where a device size is made smaller than that of a conventional structure, has a high Q value, and is excellent in a frequency temperature characteristic in a SAW device using a quartz substrate. Therefore, IDTs 2 including pluralities of electrode fingers mutually inserted and grating reflectors 3a and 3b positioned on both sides of the IDTs 2 are disposed on a piezoelectric substrate 1. The piezoelectric substrate 1 is a quartz flat plate where a cut angle ¸ of a rotation Y cut quartz substrate is set to satisfy a range of -64.0°<¸<-49.3° in a counterclockwise direction from a crystal Z-axis and a propagation direction of a surface acoustic wave is set to 90°±5° to a crystal X-axis, and a surface acoustic wave to be excited is an SH wave. The IDTs 2 and the grating reflectors 3a and 3b are made from Al or alloy including Al as a main component, and when a wavelength of a surface acoustic wave is represented as », an electrode film thickness H/» standardized by the wavelength is set to satisfy 0.04<H/»<0.12.</p>
申请公布号 EP1732216(B1) 申请公布日期 2014.01.08
申请号 EP20050720270 申请日期 2005.03.08
申请人 SEIKO EPSON CORPORATION 发明人 MORITA, TAKAO;OHWAKI, TAKUYA
分类号 H03H9/02;H03H3/10;H03H9/145;H03H9/25;H03H9/64 主分类号 H03H9/02
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