| 摘要 |
PROBLEM TO BE SOLVED: To perform highly accurate measurement and improve productivity, integration, etc., by forming a reference mark on a lower layer and using a resist pattern mark formed on an upper layer than the reference mark as a line pattern. SOLUTION: A film of a material for forming a reference mark on a silicon substrate is formed. Namely, a film of polysilicon 701 is formed. Then, a pattern is formed by resist coating, exposure and development with a 0.7-1.3μm slit pattern resist, and a reference mark 702 is formed by etching. Then, a material to be an interlayer film between the reference mark and the resist pattern mark is formed. Namely, a film of silicon dioxide 703 is formed. Then, a pattern mark (resist pattern mark) 704 is formed by resist coating, exposure and development. |
