发明名称 TREATING LIQUID AFTER ASHING AND TREATING METHOD USING THE SAME
摘要 PROBLEM TO BE SOLVED: To improve the removing property of residues produced by dry etching and ashing treatment under severer conditions and to improve the corrosion preventing effect for a substrate. SOLUTION: A treating liquid after ashing contains 0.5 to 10 wt.% lower alkyl quaternary ammonium salts and 1 to 50 wt.% polyhydric alcohols. In a treatment method using this treating liquid, after a substrate is treated by etching and ashing through making a photoresist pattern as a mask provided on the substrate, the substrate is treated by applying the treating liquid.
申请公布号 JPH11316465(A) 申请公布日期 1999.11.16
申请号 JP19990050302 申请日期 1999.02.26
申请人 TOKYO OHKA KOGYO CO LTD 发明人 TANABE MASAHITO;WAKIYA KAZUMASA;KOBAYASHI MASAICHI;NAKAYAMA TOSHIMASA
分类号 H01L21/302;G03F7/42;H01L21/027;H01L21/3065;H01L21/308;(IPC1-7):G03F7/42 主分类号 H01L21/302
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