发明名称 |
TREATING LIQUID AFTER ASHING AND TREATING METHOD USING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To improve the removing property of residues produced by dry etching and ashing treatment under severer conditions and to improve the corrosion preventing effect for a substrate. SOLUTION: A treating liquid after ashing contains 0.5 to 10 wt.% lower alkyl quaternary ammonium salts and 1 to 50 wt.% polyhydric alcohols. In a treatment method using this treating liquid, after a substrate is treated by etching and ashing through making a photoresist pattern as a mask provided on the substrate, the substrate is treated by applying the treating liquid. |
申请公布号 |
JPH11316465(A) |
申请公布日期 |
1999.11.16 |
申请号 |
JP19990050302 |
申请日期 |
1999.02.26 |
申请人 |
TOKYO OHKA KOGYO CO LTD |
发明人 |
TANABE MASAHITO;WAKIYA KAZUMASA;KOBAYASHI MASAICHI;NAKAYAMA TOSHIMASA |
分类号 |
H01L21/302;G03F7/42;H01L21/027;H01L21/3065;H01L21/308;(IPC1-7):G03F7/42 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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