BACK SIDE ILLUMINATED IMAGE SENSOR

摘要

#CMT# #/CMT# A photodetection cell has a lightly doped N-type layer (11) delimited by an insulation wall (23). Electron-hole pairs are formed in the layer after a backside illumination. A P-type ring-shaped well (13) is formed on front surface side of the layer so as to delimit a central region having heavily doped N-type upper portion (18). A control unit is configured to control the transfer of charge carriers from the layer to the upper portion. #CMT#USE : #/CMT# Backside illumination semiconductor image sensor for image capture device such as digital camera installed in mobile phone and portable game console. #CMT#ADVANTAGE : #/CMT# Since a large amount of charge is stored during the photo conversion period, the saturation problem is eliminated. Thus the performance of the device is increased. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a cross-sectional view of the image sensor. 11 : Lightly doped N-type layer 13 : P-type ring shaped well 18 : Upper portion 20 : Filter 23 : Insulation wall.