| 摘要 |
The chemical vapor deposition coating process for the production of a heat exchanger (40) and/or a component in fluid guiding system of the heat exchanger, where the component has an area equipped with a coating, comprises placing the component with a tempering area in coated condition for disposition, subjecting the tempering area with a tempering fluid stream, from carrier gas and a water based component, loaded with a silicon organic component. The fluid stream from the tempering area reacts to a corrosion-inhibiting layer in the form of a layer of silicon oxide (SiO x). The chemical vapor deposition coating process for the production of a heat exchanger (40) and/or a component in fluid guiding system of the heat exchanger, where the component has an area equipped with a coating, comprises placing the component with a tempering area in coated condition for disposition, subjecting the tempering area with a tempering fluid stream, from carrier gas and a water based component, loaded with a silicon organic component. The fluid stream from the tempering area reacts to a corrosion-inhibiting layer in the form of a layer of silicon oxide (SiO x). The carrier gas is a gas containing oxygen. The tempering of the surface and/or fluid stream is carried out in thermally assisted- and/or plasma assisted manner. The carrier gas is free from ozone or is air with ozone and consists of helium. The water-based component consists of catalytic quantity of water in gaseous form. The silicon organic component and the water-based component are brought in separate or individual fluid stream of separate or individual carrier gas to an oven (3) containing the component. The fluid stream from the carrier gas and the silicon organic component and the water-based component are led to the oven as ring stream reversible as flow direction. |
