发明名称 |
WIRING PATTERN FORMING METHOD BY LIFT-OFF METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a wiring pattern forming method that does not require complex steps as compared with the conventional lift-off method, can be applied to any of positive type and negative type resists and uses a resist pattern having a mushroom-shape cross section. SOLUTION: The top of a substrate 31 is coated with a resist 32, and the resist 32 is exposed through a desired pattern and developed. The resultant resist pattern 34 is heat-treated at a temperature at which the resist is deformed to form a resist pattern 35 having a mushroom cross section. The objective fine wiring pattern is formed using the resist pattern 35 as a mask. |
申请公布号 |
JP2000181077(A) |
申请公布日期 |
2000.06.30 |
申请号 |
JP19980360975 |
申请日期 |
1998.12.18 |
申请人 |
MURATA MFG CO LTD |
发明人 |
TOYODA YUJI;KOSHIDO YOSHIHIRO;OKAWA TADAYUKI;FUJIBAYASHI KATSURA;TAKAHASHI RYOICHIRO |
分类号 |
H01L21/027;G03F7/26;G03F7/40;(IPC1-7):G03F7/26 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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