Hetero-junction solar cell with edge isolation and method of manufacturing same

摘要

The present invention relates to a method of manufacturing a hetero-junction solar cell with edge isolation, the solar cell having a front side for an incidence of light Into the solar cell and a back side opposite to the front side. The method includes the steps of: providing a doped and textured semiconductor substrate, said semiconductor substrate having a front surface and a back surface opposite to each other and an edge surrounding the semiconductor substrate; forming at least one front layer on the front surface of the semiconductor substrate, said at least one front layer containing semiconductor atoms or molecules being arranged in amorphous and/or microcrystalline and/or oxide and/or carbide phase; forming at least one back layer on the back surface of the semiconductor substrate, said at least one back layer containing semiconductor atoms or molecules being arranged in amorphous and/or microcrystalline and/or oxide and/or carbide phase; forming an electrically conductive anti-reflection coating on the at least one front layer, said anti-reflection coating covering the whole surface of the at least one front layer and being at least partially transparent to the light irradiating into the solar cell; forming an electrically conductive back coating on the at least one back layer; and forming a front grid metallization on the anti-reflection coating. The invention further relates to an according edge isolated hetero-junction solar cell. It is the object of the present invention to provide an easy and low-cost method of manufacturing of a hetero-junction solar cell and an according solar cell, wherein short circuits between the front and the back side of the solar cell are prevented and the solar cell is not damaged by the method steps and shows good cell performance. This object is solved by a method of the above mentioned type and an according hetero-junction solar cell, wherein the conductive back coating is formed on the surface of the at least one back layer with a distance to the edge of the semiconductor substrate, leaving a merging region consisting of a margin area of the surface of the at least one back layer and the edge of the semiconductor substrate free from the conductive back coating, wherein there is no electrical contact between the conductive back coating and the conductive anti-reflection coating at all during the whole process of formation of the conductive back coating.