发明名称 APPARATUS FOR MANUFACTURING POLYCRYSTALLINE SILICON AND METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON
摘要 Raw material gas supply nozzles are arranged within a virtual concentric circle having its center at the center of a disk-like base plate (having an area half as large as an area of the base plate). Raw material gas is ejected at a flow velocity of 150 m/sec or more into a bell jar from the gas supply nozzles. In addition to one gas supply nozzle provided in a center portion of the base plate, three gas supply nozzles can be arranged at the vertex positions of a regular triangle inscribed in a circumscribed circle having its center at the gas supply nozzle in the center portion. With the gas supply nozzles so arranged, a smooth circulating flow is formed within a reactor.
申请公布号 KR20140002648(A) 申请公布日期 2014.01.08
申请号 KR20137013247 申请日期 2011.09.20
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 KUROSAWA YASUSHI;NETSU SHIGEYOSHI
分类号 C01B33/035;C01B33/02 主分类号 C01B33/035
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