| 摘要 |
In a method for manufacturing a semiconductor device in which wiring layers are formed by a damascene method, certain embodiments relate to a manufacturing method and a semiconductor device, in which a bonding pad section having a multiple-layered structure can be formed by a simple method without increasing the number of process steps. One embodiment includes a method for manufacturing a semiconductor device in which at least an uppermost wiring layer is formed by a damascene method. The method includes the following steps of: (a) forming an uppermost dielectric layer 22 in which an uppermost wiring layer is formed; (b) forming a wiring groove for the wiring layer having a specified pattern and an opening section for bonding pad section in the uppermost dielectric layer 22; (c) forming a first conduction layer for the wiring layer; (d) forming a second conduction layer over the first conduction layer, the second conduction layer composed of a different material from a material of the first conduction layer; and (e) planarizing the second conduction layer, the first conduction layer and the dielectric layer, to thereby form a wiring layer 62 composed of the first conduction layer in the wiring groove and a base conduction layer 82 composed of the first conduction layer and an exposed conduction layer 84 composed of the second conduction layer in the opening section for bonding pad section.
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