| 摘要 |
semiconductor engineering; photodetector modules for night viewing devices, thermal imagers, gas analyzers. SUBSTANCE: device whose absorption-edge wavelength is up to 7 mcm has high-resistance p-type silicon substrate with electrode and P+ contact layer on exposure side and mesa-structure with P+ photo-active absorption layer, P++ contact layer, and aluminum electrode on other side; thin transparent indium and tin oxide layer, 0.2-0.5 mcm thick, is evaporated on P++ contact layer on exposure side to function as electrode; dope concentration in P++ contact layers is Np~ 1.1019cm-3; provided between P++ contact layer of exposure side and p substrate is doped P+ layer with Np~ 1017.1018cm-3, 3-5 mcm thick, that forms, together with p substrate and p++ contact layer, (p-p+-p++) potential barrier that enables blocking dark conduction; mesa-structures and thin photo-active P+ layer with dope concentration Np~(5.7).1019cm-3 made on other side of substrate are of such depth and thickness, respectively, that P+ photo-active absorption layer is fully isolated by mesa-structure and its dope concentration is same as that of substrate at depth smaller than mesa-structure depth. Isolation attained in this way is higher than 95%. Aluminum electrode is deposited onto entire mesa-structure surface. EFFECT: enhanced isolation. 2 cl, 3 dwg
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