发明名称 |
Non-volatile memory devices, methods of manufacturing and methods of operating the same |
摘要 |
A non-volatile memory device includes: at least one horizontal electrode; at least one vertical electrode disposed to intersect the at least one horizontal electrode at an intersection region; at least one data layer disposed at the intersection region and having a conduction-insulation transition property; and at least one anti-fuse layer connected in series with the at least one data layer. |
申请公布号 |
US8624331(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US20100659644 |
申请日期 |
2010.03.16 |
申请人 |
KIM DEOK-KEE;CHO CHOONG-RAE;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DEOK-KEE;CHO CHOONG-RAE |
分类号 |
H01L29/76 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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