发明名称 |
Non-polar semiconductor light emission devices |
摘要 |
A light emitting device includes a silicon substrate having a (100) upper surface. The (100) upper surface has a recess, the recess being defined in part by (111) surfaces of the silicon substrate. The light emitting device includes a GaN crystal structure over one of the (111) surfaces which has a non-polar plane and a first surface along the non-polar plane. Light emission layers over the first surface have at least one quantum well comprising GaN. |
申请公布号 |
US8624292(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US201113155857 |
申请日期 |
2011.06.08 |
申请人 |
PAN SHAOHER X.;CHEN JAY;PAYNE JUSTIN A.;HEUKEN MICHAEL;SIPHOTON INC. |
发明人 |
PAN SHAOHER X.;CHEN JAY;PAYNE JUSTIN A.;HEUKEN MICHAEL |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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