| 摘要 |
The present technology relates to a semiconductor memory device and, more specifically, to a nonvolatile memory device, an operating method thereof and a data storage device including the same. The nonvolatile memory device comprises: memory cells arranged at a region where word lines and bit lines intersect; data read/write circuits divided into a plurality of groups, and configured to store data in the memory cells or read the data stored in the memory cells, according to an operation mode; a pass/fail check circuit unit configured to determine a pass/fail of an operation for each of the data read/write circuit groups; and a current sensing check circuit unit configured to selectively perform a fail bit count operation on each of the data read/write circuit groups, according to a determination result of the pass/fail check unit. |
