Self-aligned protection layer for copper post structure

摘要

A semiconductor device includes a semiconductor substrate and a conductive post overlying and electrically connected to the substrate. The semiconductor device further includes a manganese-containing protection layer on a surface of the conductive post. The semiconductor device further includes a cap layer over a top surface of the conductive post. A method of forming a semiconductor device includes forming a bond pad region on a semiconductor substrate. The method further includes forming a conductive post overlying and electrically connected to the bond pad region. The method further includes forming a protection layer on a surface of the conductive post, wherein the protection layer comprises manganese (Mn). The method further includes forming a cap layer on a top surface of the conductive post.