发明名称 |
Method and system for increasing alignment target contrast |
摘要 |
A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics. |
申请公布号 |
US8625096(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US20100730906 |
申请日期 |
2010.03.24 |
申请人 |
SEWELL HARRY;DUSA MIRCEA;VAN HAREN RICHARD JOHANNES FRANCISCUS;TENNER MANFRED GAWEIN;DOYTCHEVA MAYA ANGELOVA;ASML HOLDING N.V.;ASML NETHERLANDS B.V. |
发明人 |
SEWELL HARRY;DUSA MIRCEA;VAN HAREN RICHARD JOHANNES FRANCISCUS;TENNER MANFRED GAWEIN;DOYTCHEVA MAYA ANGELOVA |
分类号 |
G01B11/00;G03B27/32;G03C5/00;G03F9/00;H01L21/76;H01L23/544 |
主分类号 |
G01B11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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