发明名称 Method for making a semiconductor device
摘要 A method of making a semiconductor device comprising a semiconductor element and a support member having a recess for housing the semiconductor element is disclosed. The method includes placing at least two lead electrode portions in the molding die; supplying a molding member to the molding die so that the molding member contacts the portion of at least two lead electrode portions; heating the molding member in the molding die so as to cure the molding member into a package with the portion of at least two lead electrode portions; and removing the package from the molding die by a pushing member such that at least one of a protrusion and a recess are formed in a surface of the package. Using this process, a semiconductor device can be obtained with a high process yield.
申请公布号 US8623255(B2) 申请公布日期 2014.01.07
申请号 US20050208609 申请日期 2005.08.23
申请人 ASAKAWA HIDEO;NICHIA CORPORATION 发明人 ASAKAWA HIDEO
分类号 H01L21/56;H01L31/0203;H01L33/20;H01L33/48;H01L33/58;H01L33/62 主分类号 H01L21/56
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