发明名称 |
Memory word line boost using thin dielectric capacitor |
摘要 |
A memory including a boost circuit configured to supply a voltage higher than a supply voltage to a word line. The boost circuit includes a first capacitor having a first capacitor dielectric thickness. The boost circuit further includes a transmission gate coupled to the word line and the first capacitor, the transmission gate having a gate-dielectric thickness that is greater than the first capacitor dielectric thickness. |
申请公布号 |
US8625383(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US201313736501 |
申请日期 |
2013.01.08 |
申请人 |
YU HUNG-CHANG;CHIH YUE-DER;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YU HUNG-CHANG;CHIH YUE-DER |
分类号 |
G11C8/00 |
主分类号 |
G11C8/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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