发明名称 |
Schottky barrier diode |
摘要 |
A Schottky barrier diode includes a semiconductor layer having a plurality of trenches formed by digging in from a top surface and having mesa portions formed between adjacent trenches, and a Schottky metal formed to contact the top surface of the semiconductor layer including inner surfaces of the trenches. |
申请公布号 |
US8624347(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US201113182164 |
申请日期 |
2011.07.13 |
申请人 |
NAGAI YOSHITERU;MAKITA KOHEI;ROHM CO., LTD. |
发明人 |
NAGAI YOSHITERU;MAKITA KOHEI |
分类号 |
H01L29/47;H01L27/07;H01L29/66 |
主分类号 |
H01L29/47 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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