发明名称 |
Polysilicon layer, method of preparing the polysilicon layer, thin film transistor using the polysilicon layer, and organic light emitting display device including the thin film transistor |
摘要 |
A method of crystallizing a silicon layer. An amorphous silicon layer is formed on a buffer layer on a substrate. A catalyst metal layer is formed on the amorphous silicon layer to have a density of from about 1011 to about 1015 atom/cm2. A crystalline seed having a pyramid shape is formed on an interface between the amorphous silicon layer and the buffer layer as a catalyst metal of the catalyst metal layer diffuses into the amorphous silicon layer. The amorphous silicon layer is thermal-treated so that a polysilicon layer is formed as a silicon crystal grows by the crystallization seed. |
申请公布号 |
US8623746(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US201113012619 |
申请日期 |
2011.01.24 |
申请人 |
CHUNG YUN-MO;LEE KI-YONG;SEO JIN-WOOK;LEE KIL-WON;CHOI BO-KYUNG;SAMSUNG DISPLAY CO., LTD. |
发明人 |
CHUNG YUN-MO;LEE KI-YONG;SEO JIN-WOOK;LEE KIL-WON;CHOI BO-KYUNG |
分类号 |
H01L51/52;H01L29/786 |
主分类号 |
H01L51/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|