发明名称 Polysilicon layer, method of preparing the polysilicon layer, thin film transistor using the polysilicon layer, and organic light emitting display device including the thin film transistor
摘要 A method of crystallizing a silicon layer. An amorphous silicon layer is formed on a buffer layer on a substrate. A catalyst metal layer is formed on the amorphous silicon layer to have a density of from about 1011 to about 1015 atom/cm2. A crystalline seed having a pyramid shape is formed on an interface between the amorphous silicon layer and the buffer layer as a catalyst metal of the catalyst metal layer diffuses into the amorphous silicon layer. The amorphous silicon layer is thermal-treated so that a polysilicon layer is formed as a silicon crystal grows by the crystallization seed.
申请公布号 US8623746(B2) 申请公布日期 2014.01.07
申请号 US201113012619 申请日期 2011.01.24
申请人 CHUNG YUN-MO;LEE KI-YONG;SEO JIN-WOOK;LEE KIL-WON;CHOI BO-KYUNG;SAMSUNG DISPLAY CO., LTD. 发明人 CHUNG YUN-MO;LEE KI-YONG;SEO JIN-WOOK;LEE KIL-WON;CHOI BO-KYUNG
分类号 H01L51/52;H01L29/786 主分类号 H01L51/52
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