发明名称 |
Method to selectively grow phase change material inside a via hole |
摘要 |
An example embodiment is a method for filling a via hole with phase change material. The method steps include forming a bottom electrode in a substrate, depositing a dielectric layer above the bottom electrode, and forming a via hole within the dielectric layer down to a top surface of the bottom electrode. The substrate is heated to a reaction temperature and a first phase change material precursor is deposited within the via hole. The first precursor is configured to decompose on the top surface of the bottom electrode and chemisorb on a top surface of the dielectric layer at the reaction temperature. A second precursor is deposited within the via hole after the first precursor at least partially decomposes on the top surface of the bottom electrode. |
申请公布号 |
US8623734(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US201113150559 |
申请日期 |
2011.06.01 |
申请人 |
CHEN CHIEH-FANG;LAM CHUNG H.;SCHROTT ALEJANDRO G.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN CHIEH-FANG;LAM CHUNG H.;SCHROTT ALEJANDRO G. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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