PROCESS FOR PURIFYING OF VOLATILE MATERIAL IN HYDROFLUORIC ACID

摘要

The present invention relates to a method of effectively removing volatile impurities contained in a hydrofluoric acid solution for etching a silicone oxidized film for semiconductors and structuralizing the surface of solar cells. The method of removing the impurities uses the distillation at a specific temperature condition (40-80 degrees Celsius) and the insertion of gas for improving efficiency.