发明名称 Method of designing nonvolatile memory device
摘要 In a computer-implemented method of designing a nonvolatile memory device, first parameters associated with external environmental conditions are set. Second parameters associated with structural characteristics and internal environmental conditions are set. A first initial operation condition associated with an erase operation is determined based on the first and second parameters. A second initial operation condition associated with a program operation is determined based on the first and second parameters and the first initial operation condition. A final operation condition associated with reliability is determined based on the first and second parameters, and the first and second initial operation condition.
申请公布号 US8627257(B2) 申请公布日期 2014.01.07
申请号 US201213570498 申请日期 2012.08.09
申请人 KIM JAE-HO;KIM DAE-SIN;KIM HYUN-JAE;KIM YOUNG-GU;SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JAE-HO;KIM DAE-SIN;KIM HYUN-JAE;KIM YOUNG-GU
分类号 G06F17/50 主分类号 G06F17/50
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