发明名称 |
METHOD AND PURIFICATION OF UNSATURATED FLUORINATED CARBON COMPOUND, METHOD FOR FORMATION OF FLUOROCARBON FILM, AND METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICE |
摘要 |
A method for purifying an unsaturated fluorocarbon compound includes causing a crude unsaturated fluorocarbon compound shown by the formula C5F8 or C4F6 to come in contact with a boron oxide to obtain a purified unsaturated fluorocarbon compound. A method for forming a fluorocarbon film includes forming a fluorocarbon film by a CVD method using the purified unsaturated fluorocarbon compound as a plasma reaction gas, and a method for producing a semiconductor device includes a step of forming a fluorocarbon film by a CVD method. Because the purified unsaturated fluorocarbon compound obtained by the above method has a high purity and an extremely low water content, the compound may be suitably used as a plasma reaction gas for forming a fluorocarbon film using a plasma CVD method or a plasma reaction gas used for a semiconductor device production process including a fluorocarbon film formation step by a CVD method. |
申请公布号 |
KR101347986(B1) |
申请公布日期 |
2014.01.07 |
申请号 |
KR20087011884 |
申请日期 |
2006.11.30 |
申请人 |
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发明人 |
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分类号 |
C07C17/38;C07C21/20;C07C23/08;H01L21/312 |
主分类号 |
C07C17/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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