发明名称 Photomask and photomask substrate with reduced light scattering properties
摘要 A mask substrate, photomask and method for forming the same are provided. The photomask includes a substantially light transparent substrate and a circuitry pattern disposed over the light transparent substrate. The circuitry pattern includes a phase shifting layer disposed over the substantially light transparent substrate. A substantially light shielding layer is disposed over the phase shifting layer. At least one barrier layer is disposed over the substantially light shielding layer. An uppermost portion of the substantially light shielding layer does not comprise anti-reflective properties and the at least one barrier layer comprises an uppermost hardmask layer and an underlying anti-reflective layer.
申请公布号 US8624345(B2) 申请公布日期 2014.01.07
申请号 US201213486995 申请日期 2012.06.01
申请人 WU KEN;HSIEH HUNG-CHANG;HUNG CHANG-CHENG;HSU LUKE;HSIEH REN-GUEY;LEE HSIN-CHANG;CHEN CHIA-JEN;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 WU KEN;HSIEH HUNG-CHANG;HUNG CHANG-CHENG;HSU LUKE;HSIEH REN-GUEY;LEE HSIN-CHANG;CHEN CHIA-JEN
分类号 H01L33/44;G03F1/46;G03F1/58;G03F1/68 主分类号 H01L33/44
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