发明名称 SEMICONDUCTOR DEVICE
摘要 The present invention provides a device structure for directly applying an alternating current voltage to a light emitting diode chip. The present invention comprises a first process of dividing a light emitting diode into two and wire connecting to each light emitting diode or a light emitting diode group so that positive and negative voltages of an alternating current can be biased in the forward direction; and a second process of arranging an input/output diode (light emitting diode) around the light emitting diode or the light emitting diode group to apply a voltage in the forward direction to the light emitting diode or the light diode group so that the light can be emitted in the both directions of the positive and negative voltage. The structure may respond to both directions of a single phase alternation and three phase alternation. In this case, an external circuit for rectifying a voltage or overlaying a direct current voltage is not necessary, thereby lowering costs of light emitting diode components. Furthermore, the light emitting diode can be applied to a white light emitting diode as well as a single light emitting diode.
申请公布号 KR20140001719(A) 申请公布日期 2014.01.07
申请号 KR20120077676 申请日期 2012.07.17
申请人 NANOMATERIAL LABORATORY CO., LTD.;KOREA RESOURCES CORPORATION;LEE, YOUNG JU;ENERGY & GONGJO CO., LTD. 发明人 SHIOYA YOSHIMI;OH, SANG MOOK
分类号 H01L33/36;H01L33/48;H01L33/62 主分类号 H01L33/36
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