发明名称 |
Silicon carbide substrate, semiconductor device, method of manufacturing silicon carbide substrate and method of manufacturing semiconductor device |
摘要 |
A main surface of a silicon carbide substrate is inclined by an off angle in an off direction from {0001} plane of a hexagonal crystal. The main surface has such a characteristic that, among emitting regions emitting photoluminescent light having a wavelength exceeding 650 nm of the main surface caused by excitation light having higher energy than band-gap of the hexagonal silicon carbide, the number of those having a dimension of at most 15 mum in a direction perpendicular to the off direction and a dimension in a direction parallel to the off direction not larger than a value obtained by dividing penetration length of the excitation light in the hexagonal silicon carbide by a tangent of the off angle is at most 1×104 per 1 cm2. Accordingly, reverse leakage current can be reduced. |
申请公布号 |
US8624266(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US201113334855 |
申请日期 |
2011.12.22 |
申请人 |
HARADA SHIN;HONKE TSUBASA;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
HARADA SHIN;HONKE TSUBASA |
分类号 |
H01L29/24;C30B23/04 |
主分类号 |
H01L29/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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