发明名称 |
High electron mobility transistors with multiple channels |
摘要 |
A device includes a source for transmitting an electronic charge through a conduction path; a drain for receiving the electronic charge; a stack for providing at least part of the conduction path; and a gate operatively connected to the stack for controlling a conduction of the electronic charge. The stack includes an insulator layer, an N-polar layer and a barrier layer selected such that, during an operation of the device, the conduction path formed in the N-polar layer includes a two-dimensional electron gas (2DEG) channel and an inversion carrier channel. |
申请公布号 |
US8624667(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US201213567749 |
申请日期 |
2012.08.06 |
申请人 |
TEO KOON HOO;FENG PEIJIE;DUAN CHUNJIE;OISHI TOSHIYUKI;MASATOSHI NAKAYAMA;MITSUBISHI ELECTRIC RESEARCH LABORATORIES, INC. |
发明人 |
TEO KOON HOO;FENG PEIJIE;DUAN CHUNJIE;OISHI TOSHIYUKI;MASATOSHI NAKAYAMA |
分类号 |
H01L25/00 |
主分类号 |
H01L25/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|