| 摘要 |
An apparatus for processing a substrate according to the present invention comprises: a supporting member on which a substrate is mounted; and a ring assembly which concentrates plasma on the substrate on the supporting member, wherein the ring assembly covers the substrate without touching the substrate and includes external rings consisting of multiple rings which are disposed above and below each other and an external ring driving member which makes the rings touch each other or be separated by moving the rings up and down. As a result, both the top and the bevel part of a substrate can be etched in one chamber. |
