| 摘要 |
PROBLEM TO BE SOLVED: To obtain an MOS semiconductor device in which power consumption is decreased by adjusting a threshold voltage to a specified level thereby reducing leakage current without lowering the operating speed of transistors. SOLUTION: An MOS semiconductor device 1 formed using an SOI substrate where a supporting substrate 3 an insulation layer (buried oxide film) 2 and a semiconductor layer are sequentially laid in layer has conductors (N well, P well) underlying the insulation layer 2. The MOS semiconductor device 1 comprises a threshold level control circuit which compares a signal f(soi) formed by an oscillator in the semiconductor device with a reference signal f(ref) inputted externally and applies bias voltages Vsub1 and Vsub2 to the conductors (N well, P well) based on the difference of both signals.
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