| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an impurity diffused layer including a shallow box impurity profile in high concentration therein and a method for manufacturing the same. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of forming a diffusion forming auxiliary film on the surface of a semiconductor substrate, doping impurity on the surface of the substrate via the auxiliary film, executing second annealing after the doping, removing the auxiliary film after the second annealing, and first annealing after the auxiliary film is removed. The auxiliary film is a film for protecting the surface of the semiconductor in the case of doping. The semiconductor device is provided.
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