| 摘要 |
Disclosed herein is a semiconductor device wherein element active regions for an N channel region and a P channel region are formed so as to adjoin each other, and gate electrode is formed so as to stride over both channel regions and an element isolation oxide film for separating both channel regions from each other. In the semiconductor device, the gate electrode comprises a structure wherein a polycrystalline silicon film, a first barrier metal film, a second barrier metal film and a metal film are laminated in order from below. The first barrier metal film is removed at the border part between the N channel region and the P channel region.
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