| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, which reduces the segregation of a catalyst element used for a crystallization in a semiconductor layer, can obtain the highly reliable semiconductor device and obtains a high-definition image when the method is adapted to the semiconductor device of a structure that a pixel part and a drive circuit are provided on the same substrate. SOLUTION: In a method of manufacturing a semiconductor device, an exhaust is performed using a vacuum pump after a crystallizing process of a semiconductor film using a catalyst element and a heating treatment of the semiconductor film is performed in the atmosphere of an oxygen concentration of 5 ppm or lower under a reduced pressure (133 Pa or lower), whereby the catalyst element can be efficiently gettered in a gettering region doped with an impurity element (an impurity element, which has a gettering action and belongs to the XV group of the periodic table: typically phosphorus, or in addition to the phosphorus, an impurity element belonging to the XIII group of the periodic table: typically boron).
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