SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The present invention provides a transistor which suppresses the shape failure of a semiconductor device when source and drain electrode layers are formed to be in contact with an oxide semiconductor film. Formed is the source and drain electrode layers having a cross section shape which is difficult to form disconnection even if the film thickness of the oxide semiconductor film or the film thickness of a gate insulation film formed on the source and drain electrode layers are thin. The oxide semiconductor film having a crystal structure is formed on insulating surface. An electrode layer is formed by being touched with a part of the top of the oxide semiconductor film. The film thickness of an exposure unit of the oxide semiconductor film becomes thin by exposing the exposure unit to an attenuated hydrofluoric acid in which the concentration is more than 0.0001% and less than 0.25%.