METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

This method for producing a semiconductor device (100) has the following steps: preparing a semiconductor substrate (16) having a first principal surface (16A) and a second principal surface (16B) which face one another; affixing the semiconductor substrate (16) with adhesive tape (1) on the first principal surface (16A); positioning the semiconductor substrate (16) affixed by the adhesive tape (1) inside a housing chamber (31); emitting exhaust from the housing chamber (31) while maintaining an adhesive-tape (1) temperature of 100°C or higher; reducing the temperature of the semiconductor substrate (16) following the step for emitting exhaust from the housing chamber (31); and forming an electrode (15) on the second principal surface (16B) of the semiconductor substrate (16) following the step for reducing the temperature of the semiconductor substrate (16). As a result, it is possible to provide a method for producing a semiconductor device capable of reducing the contact resistance between a semiconductor substrate and an electrode.