| 摘要 |
The present invention relates to a device which includes: a sensor stack which includes a reference layer, a free layer, and a barrier layer which is arranged between the reference layer and the free layer; a seed layer; and a cap layer. The sensor stack is arranged between the seed layer and the cap layer. The seed layer or the cap layer includes TaX. The X is selected among Cr, V, Ti, Zr, Nb, Mo, Hf, W, and a mixture thereof. |
