| 发明名称 |
Diode structure on MOS wafer |
| 摘要 |
Three diode structures on a metal-oxide-semiconductor (MOS) wafer. Each diode structure is capable of reducing parasitic current through the wafer and hence increasing the power conversion efficiency of a voltage step-up circuit.
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| 申请公布号 |
US2002109202(A1) |
申请公布日期 |
2002.08.15 |
| 申请号 |
US20010793945 |
申请日期 |
2001.02.27 |
| 申请人 |
CHEN TE-WEI;HUANG JIA JIO |
发明人 |
CHEN TE-WEI;HUANG JIA JIO |
| 分类号 |
H01L27/08;H01L29/167;H01L29/861;(IPC1-7):H01L29/00 |
主分类号 |
H01L27/08 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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