| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for improving reliability in a polysilicon thin-film transistor for solving the problem regarding leakages due to roughness on the surface of a polysilicon layer. SOLUTION: In the manufacturing process of the thin-film transistor, the surface of the polysilicon layer is subjected to oxidation treatment for generating a silicon film layer, and then the silicon oxide film layer is removed by offset chemicals. By using the manufacturing method for effectively reducing the roughness on the polysilicon surface, bumps that are generated on the polysilicon layer due to recrystallization is planarized, and the reliability in the thin-film transistor is improved.
|
