| 摘要 |
An etching method characterized by comprising: a step for feeding an etching gas which contains a carbon fluoride (CF)-based gas into a treatment vessel, and forming a plasma from the etching gas; and a step for subjecting a silicon oxide film in which the silicon content per unit volume, the fluorine content per unit volume and/or the volume density changes in the depthwise direction to etching via a polysilicon mask which has a prescribed pattern and which is laminated on the silicon oxide film. |
